FR9N20D规格书供应价格微碧半导体VBSEMI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FR9N20D	文件：1.76292 Mbytes Page：7 Pages	N-Channel 200 V (D-S) MOSFET 文件：1.76292 Mbytes 页数：7 Pages	VBSEMI 微碧半导体	VBSEMI
IRFR9N20D	文件：126.79 Kbytes Page：10 Pages	Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A) SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters 文件：126.79 Kbytes 页数：10 Pages	IRF	IRF
IRFR9N20DPBF	文件：222.52 Kbytes Page：10 Pages	HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free 文件：222.52 Kbytes 页数：10 Pages	IRF	IRF
IRFU9N20D	文件：126.79 Kbytes Page：10 Pages	Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A) SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters 文件：126.79 Kbytes 页数：10 Pages	IRF	IRF

更多FR9N20D供应商更新时间2026-6-1 15:53:00