FQP10N60C数据手册ONSEMI中文资料规格书
FQP10N60C规格书详情
描述 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
技术参数
- 型号：
FQP10N60C
- 功能描述：
MOSFET 600V N-Ch Q-FET advance C-Series
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
22087 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
TO-220 |
88 |
原装正品,假一罚十! |
询价 | ||
FAIRCHILD/仙童 |
25+ |
TO-220 |
45000 |
FAIRCHILD/仙童全新现货FQP10N60C即刻询购立享优惠#长期有排单订 |
询价 | ||
FAIRCHI |
1844+ |
TO220 |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FSC/ON |
23+ |
原包装原封 □□ |
2646 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
询价 | ||
FAIRCHILD/仙童 |
10+ |
TO-220 |
2 |
询价 | |||
FAIRCHILD |
23+ |
TO-220 |
65400 |
询价 | |||
FAIRCHILD/仙童 |
2223+ |
TO-220 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
FSC |
24+ |
TO-220 |
1526 |
全新原装环保现货 |
询价 |
