FQP20N06TSTU

N-ChannelQFETMOSFET60V,20A,60m

FQPF20N06

60VN-ChannelMOSFET

Features •15A,60V,RDS(on)=60mΩ(Max.)@VGS=10V,ID=7.5A •LowGateCharge(Typ.11.5nC) •LowCrss(Typ.25pF) •100AvalancheTested •175°CMaximumJunctionTemperatureRating

FQPF20N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQPF20N06L

60VLOGICN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FQU20N06

60VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FQU20N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16.8A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.063Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQU20N06L

N-ChannelQFETMOSFET60V,17.2A,42m

FQU20N06L

N-ChannelQFET짰MOSFET60V,17.2A,42m廓

FQU20N06L

60VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQU20N06L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=17.2A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.