60V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：682.2 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

P-Channel QFET짰 MOSFET -60 V, -12 A, 135 m廓

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.44351 Mbytes 页数：9 Pages

FAIRCHILD

仙童半导体

P-Channel QFET® MOSFET -60 V, -12 A, 135 mΩ

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.59143 Mbytes 页数：11 Pages

ONSEMI

安森美半导体

-60V P-Channel MOSFET

Description This advanced MOSFET technology has been es pecially tailored to reduce on-st ate resistance, and to provi de super ior sw itching performa nce and high avala nche energy strength . These device s are suitable for switched mode powe r supplies , audio ampl ifier, DC motor control,

文件：1.11728 Mbytes 页数：7 Pages

EVVOSEMI

翊欧

P-Channel QFET MOSFET

文件：892.15 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

丝印：FQD17P06；Package：DPAK；P-Channel QFET® MOSFET -60 V, -12 A, 135 mΩ

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.59143 Mbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：FQD17P06；Package：TO-252；-60V P-Channel MOSFET

Description This advanced MOSFET technology has been es pecially tailored to reduce on-st ate resistance, and to provi de super ior sw itching performa nce and high avala nche energy strength . These device s are suitable for switched mode powe r supplies , audio ampl ifier, DC motor control,

文件：1.11728 Mbytes 页数：7 Pages

EVVOSEMI

翊欧

功率 MOSFET，P 沟道，QFET®，-60 V，-12 A，135 mΩ，DPAK

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-12A, -60V, RDS(on)= 135mΩ（最大值）@VGS = -10 V, ID = -6A栅极电荷低（典型值：21nC)\n•低 Crss（典型值80pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

文件：912.3 Kbytes 页数：4 Pages

BYCHIP

百域芯

P-Channel QFET짰 MOSFET -60 V, -12 A, 135 m廓

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.44351 Mbytes 页数：9 Pages

FAIRCHILD

仙童半导体