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5N90

5Amps,900VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC5N90isaN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulse

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

5N90

5A,900VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

5N90

FastSwitchingSpeed

•DESCRIPTION •DrainCurrentID=5A@TC=25℃ •DrainSourceVoltage-:VDSS=900V(Min) •FastSwitchingSpeed •APPLICATIONS •Generalpurposepoweramplifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

5N90

N-ChannelPowerMOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell5N90isathree-terminalsilicondevicewithcurrentconductioncapabilityof5A,fastswitchi

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

FQA5N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA5N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQAF5N90

900VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB5N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB5N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB5N90

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB5N90

N-ChannelQFET짰MOSFET900V,5.4A,2.3廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB5N90

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB5N90TM

N-ChannelQFET짰MOSFET900V,5.4A,2.3廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI5N90

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI5N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP5N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF5N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF5N90

IscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

HM5N90

SiliconN-ChannelPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMS5N90I

N-ChannelSuperJunctionPowerMOSFET?

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
23+
TO-263(D2PAK)
90000
只做原厂渠道价格优势可提供技术支持
询价
FAIRCHILD/仙童
22+
SOT-263
20000
保证原装正品,假一陪十
询价
FAIRCHILD/仙童
22+
TO-263
150
原装现货假一赔十
询价
FAIRCHILD/仙童
2022+
TO-263
79999
询价
FAIRCHILD/仙童
263
11
50
询价
FAIRCHILD/仙童
24+
TO263
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
FairchildSemiconductor
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
FSC
23+
TO-263
8650
受权代理!全新原装现货特价热卖!
询价
FAIRCHILD
22+23+
TO263
11799
绝对原装正品全新进口深圳现货
询价
FAIRCHIL
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
更多FQB5N90MOS(场效应管)供应商 更新时间2024-5-27 16:08:00