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FQB55N10TM中文资料仙童半导体数据手册PDF规格书
FQB55N10TM规格书详情
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
特性 Features
• 55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V
• Low gate charge ( typical 75 nC)
• Low Crss ( typical 130 pF)
• Fast switching
• 100 avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• RoHS Compliant
产品属性
- 型号：
FQB55N10TM
- 功能描述：
MOSFET 100V N-Channel QFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
SOT263 |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
FQB55N10TM |
1420 |
1420 |
询价 | ||||
on |
18+ |
na |
1600 |
全新原装公司现货
|
询价 | ||
ONSEMI |
25+ |
TO-263 |
1543 |
原厂原装,价格优势 |
询价 | ||
onsemi(安森美) |
24+ |
D2PAK-3 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
FAIRCHILD |
2430+ |
SOT263 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
FSC |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
询价 | ||
on |
24+ |
na |
5000 |
全新原装正品,现货销售 |
询价 | ||
FAIRCHIL |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 |
