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FQB55N10TM中文资料仙童半导体数据手册PDF规格书
FQB55N10TM规格书详情
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
特性 Features
• 55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V
• Low gate charge ( typical 75 nC)
• Low Crss ( typical 130 pF)
• Fast switching
• 100 avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• RoHS Compliant
产品属性
- 型号：
FQB55N10TM
- 功能描述：
MOSFET 100V N-Channel QFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
询价 | ||
on |
24+ |
na |
5000 |
全新原装正品,现货销售 |
询价 | ||
ONSEMI/安森美 |
2511 |
TO-263-2 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
FAIRCHILD/仙童 |
11+ |
SOT263 |
555 |
原装现货 |
询价 | ||
FAIRCHILD/仙童 |
21+ |
TO263 |
1709 |
询价 | |||
on |
18+ |
na |
1600 |
全新原装公司现货
|
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-263 |
30000 |
只做原装正品 |
询价 | ||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
FQB55N10TM |
25+ |
1420 |
1420 |
询价 | |||
FAIRCHILD/仙童 |
22+ |
TO263 |
12245 |
现货,原厂原装假一罚十! |
询价 |
