FQB55N10中文资料安森美半导体数据手册PDF规格书
FQB55N10规格书详情
描述 Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
特性 Features
• 55 A, 100 V, RDS(on) = 26 mΩ (Max.) @ VGS = 10 V, ID = 27.5 A
• Low Gate Charge (Typ. 75 nC)
• Low Crss (Typ. 130 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
产品属性
- 型号：
FQB55N10
- 制造商：
Fairchild Semiconductor Corporation
- 功能描述：
MOSFET N D2-PAK
- 功能描述：
MOSFET, N, D2-PAK
- 功能描述：
MOSFET, N, D2-PAK; Transistor
- Polarity：
N Channel; Continuous Drain Current
- Id：
55A; Drain Source Voltage
- Vds：
100V; On Resistance
- Rds(on)：
26mohm; Rds(on) Test Voltage
- Vgs：
10V; Threshold Voltage Vgs
- Typ：
4V; Power Dissipation
- Pd：
155W ;RoHS
- Compliant：
Yes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2022+ |
3090 |
全新原装 货期两周 |
询价 | |||
FAIRCHILD/仙童 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FQB55N10 |
25+ |
1420 |
1420 |
询价 | |||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
TO-263 |
97 |
原装正品,假一罚十! |
询价 | ||
FAIRCHILD/仙童 |
24+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
FAIRCHILD |
17+ |
TO-263 |
9888 |
全新原装现货 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-263 |
30000 |
只做原装正品 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
SOT-263 |
21590 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
FSC |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
询价 |
