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FQB50N06LTM中文资料仙童半导体数据手册PDF规格书
FQB50N06LTM规格书详情
描述 Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
特性 Features
• 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A
• Low Gate Charge (Typ. 24.5 nC)
• Low Crss (Typ. 90 pF)
• 100 Avalanche Tested
• 175°C Maximum Junction Temperature Rating
产品属性
- 型号:
FQB50N06LTM
- 功能描述:
MOSFET 60V N-Channel QFET Logic Level
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
2511 |
TO-263-3 |
9550 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ONSEMI/安森美 |
22+ |
TO-263 |
18500 |
原装正品支持实单 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-263 |
85000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
ON(安森美) |
2447 |
TO-263-3 |
105000 |
800个/圆盘一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
FAI |
23+ |
7300 |
专注配单,只做原装进口现货 |
询价 | |||
FAIRCHILD/仙童 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON/安森美 |
22+ |
D2PAK-3 |
18000 |
原装正品 |
询价 | ||
Fairchild |
23+ |
33500 |
询价 |