FQB11P06

60V P-Channel MOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FQB11P06

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=-11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.175Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

FQB11P06

功率 MOSFET，P 沟道，QFET®，-60 V，-11.4 A，175 mΩ，D2PAK; •-11.4A, -60V, RDS(on)=175mΩ（最大值）@VGS = -10 V, ID = -5.7A\n•低栅极电荷（典型值13nC）\n•低 Crss（典型值45pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n;

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

FQB11P06

60V P-Channel MOSFET

FQB11P06TM

P-Channel QFET MOSFET -60 V, -11.4 A, 175 m廓

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FQB11P06_04

60V P-Channel MOSFET