High Voltage Rectifier Stacks

High Voltage Rectifier Stacks 0.5A -2.2A • 70ns -150ns • Axial Leaded

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High Voltage Rectifier Stacks 2.2A ??70ns ??Axial Leaded

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VMI

Rectifier Assemblies

VMI

GENERAL PURPOSE PHEMT

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GENERAL PURPOSE PHEMT DIE

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HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

DESCRIPTION AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure mini

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