EconoPIM3 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Electrical Features • Low Switching Losses • Tvj op = 150°C • VCEsat with positive Temperature Coefficient • Low VCEsat Mechanical Features • High Power and Thermal Cycling Capability • Integrated NTC temperature sensor • Copper Base Plate • PressFIT Contact Technology • Standard Housing

文件：602.4 Kbytes 页数：12 Pages

Infineon

英飞凌

EconoPIM™2 module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and NTC

Features • Electrical features - VCES = 1200 V - IC nom = 100 A / ICRM = 200 A - Low VCEsat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 • Mechanical features - Al2O3 substrate with low thermal resistance - Copper base plate - Integrated NTC temperature sensor - Solder contact

文件：635.16 Kbytes 页数：19 Pages

Infineon

英飞凌

EconoPIM™2 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC

Features • Electrical features - VCES = 1200 V - IC nom = 100 A / ICRM = 200 A - Low VCEsat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 • Mechanical features - Al2O3 substrate with low thermal resistance - Copper base plate - Integrated NTC temperature sensor - PressFIT contac

文件：697.79 Kbytes 页数：19 Pages

Infineon

英飞凌

EconoPIM™3 module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and NTC

Features • Electrical features - VCES = 1200 V - IC nom = 100 A / ICRM = 200 A - TRENCHSTOPTM IGBT7 - Low VCEsat - Overload operation up to 175°C • Mechanical features - High power and thermal cycling capability - Integrated NTC temperature sensor - Copper base plate - Al2O3 substrate w

文件：611.03 Kbytes 页数：21 Pages

Infineon

英飞凌

EconoPIM™3 module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC

Features • Electrical features - VCES = 1200 V - IC nom = 100 A / ICRM = 200 A - TRENCHSTOPTM IGBT7 - Low VCEsat - Overload operation up to 175°C • Mechanical features - High power and thermal cycling capability - Integrated NTC temperature sensor - Copper base plate - Al2O3 substrate w

文件：642.19 Kbytes 页数：21 Pages

Infineon

英飞凌

2,500 V - 10,000 V Rectifier Stacks 2.2 A Forward Current 3000 ns Recovery Time

2,500 V - 10,000 V Rectifier Stacks 2.2 A Forward Current 3000 ns Recovery Time

文件：82.89 Kbytes 页数：2 Pages

VMI

DC-DC Converter Applications

Features • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting. • The FP101 is formed with 2chips, one being equivalent to the 2SB1121 and the other the SB05-05CP, placed in one package.

文件：118.16 Kbytes 页数：4 Pages

SANYO

三洋

SILICON SURGE SUPPRESSOR DIODES

[LEDEX]

文件：390.72 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON SURGE SUPPRESSOR DIODES

[LEDEX]

文件：390.72 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON SURGE SUPPRESSOR DIODES

[LEDEX]

文件：390.72 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商