FP100R12KT4

EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode

EconoPIM™3modulewithtrench/fieldstopIGBT4andEmCon4diode

FP100R12KT4_B11

EconoPIM3 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

ElectricalFeatures •LowSwitchingLosses •Tvjop=150°C •VCEsatwithpositiveTemperatureCoefficient •LowVCEsat MechanicalFeatures •HighPowerandThermalCyclingCapability •IntegratedNTCtemperaturesensor •CopperBasePlate •PressFITContactTechnology •StandardHousing

FP100R12N2T7

EconoPIM™2 module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and NTC

Features •Electricalfeatures -VCES=1200V -ICnom=100A/ICRM=200A -LowVCEsat -Overloadoperationupto175°C -TRENCHSTOPTMIGBT7 •Mechanicalfeatures -Al2O3substratewithlowthermalresistance -Copperbaseplate -IntegratedNTCtemperaturesensor -Soldercontact

FP100R12N2T7_B11

EconoPIM™2 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC

Features •Electricalfeatures -VCES=1200V -ICnom=100A/ICRM=200A -LowVCEsat -Overloadoperationupto175°C -TRENCHSTOPTMIGBT7 •Mechanicalfeatures -Al2O3substratewithlowthermalresistance -Copperbaseplate -IntegratedNTCtemperaturesensor -PressFITcontac

FP100R12N3T7

EconoPIM™3 module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and NTC

Features •Electricalfeatures -VCES=1200V -ICnom=100A/ICRM=200A -TRENCHSTOPTMIGBT7 -LowVCEsat -Overloadoperationupto175°C •Mechanicalfeatures -Highpowerandthermalcyclingcapability -IntegratedNTCtemperaturesensor -Copperbaseplate -Al2O3substratew

FP100R12N3T7_B11

EconoPIM™3 module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC

Features •Electricalfeatures -VCES=1200V -ICnom=100A/ICRM=200A -TRENCHSTOPTMIGBT7 -LowVCEsat -Overloadoperationupto175°C •Mechanicalfeatures -Highpowerandthermalcyclingcapability -IntegratedNTCtemperaturesensor -Copperbaseplate -Al2O3substratew

FP100S

2,500 V - 10,000 V Rectifier Stacks 2.2 A Forward Current 3000 ns Recovery Time

2,500V-10,000VRectifierStacks 2.2AForwardCurrent 3000nsRecoveryTime

FP101

DC-DC Converter Applications

Features •CompositetypewithaPNPtransistorandaShottky barrierdiodecontainedinonepackage,facilitating high-densitymounting. •TheFP101isformedwith2chips,onebeingequivalenttothe2SB1121andtheothertheSB05-05CP,placedinonepackage.

FP1010

SILICON SURGE SUPPRESSOR DIODES

[LEDEX]

FP10100

SILICON SURGE SUPPRESSOR DIODES

[LEDEX]