FP150F

High Voltage Rectifier Stacks

HighVoltageRectifierStacks 0.5A-2.2A•70ns-150ns•AxialLeaded

FP150F

High Voltage Rectifier Stacks

HighVoltageRectifierStacks 0.5A-2.2A•70ns-150ns•AxialLeaded

FP150R07N3E4

IGBT Modules

FEATURES ·TrenchFieldStoptechnology ·Freewheelingdiodeswithfastandsoft reverserecovery ·Industrialstandardpackagewithcopper baseplate APPLICATIONS ·MotorDrives,Motion/ServoDrives ·InverterandPowersupplies

FP150R12KT4_B11

EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features •Single-channelisolatedgatedriver •Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs •Upto6.5Atypicalpeakoutputcurrent •45nspropagationdelaywith7nspart-to-partmatching(skew) •35Vabsolutemaximumoutputsupplyvoltage •Highcommon-mode

FP150R12N3T7

EconoPIM™3 module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and NTC

Features •Electricalfeatures -VCES=1200V -ICnom=150A/ICRM=300A -TRENCHSTOPTMIGBT7 -Overloadoperationupto175°C -LowVCEsat •Mechanicalfeatures -IntegratedNTCtemperaturesensor -Soldercontacttechnology -Copperbaseplate -Al2O3substratewithlowthermal

FP150R12N3T7_B11

EconoPIM™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC

Features •Electricalfeatures -VCES=1200V -ICnom=150A/ICRM=300A -TRENCHSTOPTMIGBT7 -Overloadoperationupto175°C -LowVCE,sat •Mechanicalfeatures -IntegratedNTCtemperaturesensor -PressFITcontacttechnology -Copperbaseplate -Al2O3substratewithlowtherm

FP150R12N3T7P_B11

EconoPIM™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and PressFIT / NTC / TIM

Features •Electricalfeatures -VCES=1200V -ICnom=150A/ICRM=300A -TRENCHSTOPTMIGBT7 -Overloadoperationupto175°C -LowVCE,sat •Mechanicalfeatures -IntegratedNTCtemperaturesensor -PressFITcontacttechnology -Copperbaseplate -Al2O3substratewithlowtherm

FP150S

12,500 V - 20,000 V Rectifier Stacks 2.2 A Forward Current 3000 ns Recovery Time

12,500V-20,000VRectifierStacks 2.2AForwardCurrent 3000nsRecoveryTime

FP1510SOT89

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

DESCRIPTIONANDAPPLICATIONS TheFP1510SOT89isapackagedAluminumGalliumArsenide/IndiumGalliumArsenideAlGaAs/InGaAs)pseudomorphicHighElectronMobilityTransistor(pHEMT).Itutilizesa0.10µmx1500µmSchottkybarriergate,definedbyelectron-beamphotolithography.Therecessed“

FP1527

OTP Encoder

SC1527Description:(Compatible:EV1527,RT1527,FP1527) SC1527isOTPEncoderutilizingCMOStechnologyprocess.SC1527 haiamaximumof20bitsprovidingupto1millioncodes.Itcanreduceany codecollisionandunauthorizedcodescanningpossibilities. SC1527Features:(Compatible:EV1527,RT