Schottky Diodes

分立

Rectron

丽正国际

LOW Vf SCHOTTKY BATTIER RECTIFIER

文件：347.18 Kbytes 页数：5 Pages

RECTRON

丽正国际

PNP Low Saturation Transistor

PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB.

文件：48.01 Kbytes 页数：4 Pages

Fairchild

仙童半导体

PNP Low Saturation Transistor

PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB.

文件：48.01 Kbytes 页数：4 Pages

Fairchild

仙童半导体

2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：47.46 Kbytes 页数：6 Pages

Intersil