Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor

Switching Circuit Feature 1) A super-minimold package hcuses 2 transistors. 2) Ideal for use in switching circuit.

文件：62.35 Kbytes 页数：2 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.31Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.85 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.31Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.85 Kbytes 页数：2 Pages

ISC

无锡固电

Ku K-Brand Power GaAs Modules

Ku, K-Brand Power GaAs Modules

文件：59.28 Kbytes 页数：2 Pages

FUJITSU

富士通

Ku K-Brand Power GaAs Modules

K-Band Power GaAs Modules

文件：57 Kbytes 页数：2 Pages

FUJITSU

富士通

Ku K-Brand Power GaAs Modules

Ku, K-Brand Power GaAs Modules

文件：59.1 Kbytes 页数：2 Pages

FUJITSU

富士通

Ku K-Brand Power GaAs Modules

Ku, K-Brand Power GaAs Modules

文件：58.52 Kbytes 页数：2 Pages

FUJITSU

富士通

Ku K-Brand Power GaAs Modules

Ku K-Brand Power GaAs Modules

文件：56.72 Kbytes 页数：2 Pages

FUJITSU

富士通

Ku K-Brand Power GaAs Modules

Ku K-Brand Power GaAs Modules

文件：59.23 Kbytes 页数：2 Pages

FUJITSU

富士通

Test 2.92mm Male to 2.92mm Female Cable FM160FLEX Coax

Features • Max Frequency 40 GHz • Shielding Effectivity > 90 dB • 76% Phase Velocity • Triple Shielded • ETFE Jacket • Applications • General Purpose • Test & Measurement • Laboratory Use • Description • The 2.92mm male to 2.92mm female cable using FM160FLEX coax, part number FMC294

文件：344.25 Kbytes 页数：5 Pages

FAIRVIEW