Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor

Switching Circuit Feature 1) A super-minimold package hcuses 2 transistors. 2) Ideal for use in switching circuit.

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ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.31Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.85 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.31Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.85 Kbytes 页数：2 Pages

ISC

无锡固电

Ku K-Brand Power GaAs Modules

Ku, K-Brand Power GaAs Modules

文件：59.28 Kbytes 页数：2 Pages

Fujitsu

富士通

Ku K-Brand Power GaAs Modules

K-Band Power GaAs Modules

文件：57 Kbytes 页数：2 Pages

Fujitsu

富士通

Ku K-Brand Power GaAs Modules

Ku, K-Brand Power GaAs Modules

文件：59.1 Kbytes 页数：2 Pages

Fujitsu

富士通

Ku K-Brand Power GaAs Modules

Ku, K-Brand Power GaAs Modules

文件：58.52 Kbytes 页数：2 Pages

Fujitsu

富士通

Ku K-Brand Power GaAs Modules

Ku K-Brand Power GaAs Modules

文件：56.72 Kbytes 页数：2 Pages

Fujitsu

富士通

Ku K-Brand Power GaAs Modules

Ku K-Brand Power GaAs Modules

文件：59.23 Kbytes 页数：2 Pages

Fujitsu

富士通

Power management (dual digital transistor)

The following characteristics apply to both the DTr1 and DTr2, however, the “–” sign on DTr2 values for the PNP type have been omitted. • Features 1) Includes a DTA124E and a DTC124E transistor in a single UMT and a SMT package. 2) Ideal for power switch circuits. 3) Mounting cost an

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ROHM

罗姆