SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere

FEATURES * Low switching noise * Low forward voltage drop * High current capability * High switching capability * High surge capabitity * High reliability * P/N suffix V means AEC-Q 101 qualified, e.g:FM120V * P/N suffix V means Halogen-free

文件：269.45 Kbytes 页数：6 Pages

RECTRON

丽正国际

Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

文件：68.87 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage current .

文件：71.15 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V

Features •Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. •Low profile surface mounted application in order to optimize board space. •Low power loss, high efficiency. •High current capability, low forward voltage drop.

文件：910.12 Kbytes 页数：5 Pages

CHENDA

辰达半导体

Schottky Diodes

分立

Rectron

丽正国际

256Kb Bytewide 5V F-RAM Memory

Description The FM1808B is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High E

文件：336.12 Kbytes 页数：12 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256Kb Bytewide 5V F-RAM Memory

Description The FM1808B is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High E

文件：336.12 Kbytes 页数：12 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere

FEATURES * Low switching noise * Low forward voltage drop * High current capability * High switching capability * High surge capabitity * High reliability * P/N suffix V means AEC-Q 101 qualified, e.g:FM120BV * P/N suffix V means Halogen-free

文件：286.28 Kbytes 页数：6 Pages

RECTRON

丽正国际

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

文件：72.19 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

SILICON EPITAXIAL PLANCE TYPE

FEATURES • Plastic package has Underwriters Laboratory • Flammability classification 94V-0 Utilizing Fame • Retardant Epoxy Molding Compound • For surface mount applications • Exceeds environmental standards of MIL-S-19500/228 • Low leakage current.

文件：130.28 Kbytes 页数：2 Pages

PACELEADER

霈峰