P-Ch 30V Fast Switching MOSFETs

Description The FKD3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD3115 meet the RoHS and Green Product requirement, 100 EAS guaranteed with full function reliability approved.

文件：496.17 Kbytes 页数：4 Pages

FETEK

台湾东沅

MOSFET

Fetek

台湾东沅

Hybrid integrated circuits for inductive proximity detectors

DESCRIPTION The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud. The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an o

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PHI

PHI

Hybrid integrated circuits for inductive proximity detectors

DESCRIPTION The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud. The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an o

文件：36.63 Kbytes 页数：8 Pages

PHI

PHI

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three FET

文件：1.84502 Mbytes 页数：14 Pages

ZETEX