MLCC with Dipped Radial Lead Commercial Grade

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

文件：139.35 Kbytes 页数：11 Pages

TDK

东电化

MLCC with Dipped Radial Lead Commercial Grade

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

文件：139.35 Kbytes 页数：11 Pages

TDK

东电化

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

文件：139.35 Kbytes 页数：11 Pages

TDK

东电化

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................250V ● rDS (ON) (MAX) .............................................................. 0.31Ω ● ID .......................................................................................

文件：55.09 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................250V ● rDS (ON) (MAX) .............................................................. 0.31Ω ● ID .......................................................................................

文件：61.04 Kbytes 页数：5 Pages

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.31Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.47 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.41Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.47 Kbytes 页数：2 Pages

ISC

无锡固电

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................300V ● rDS (ON) (MAX) .............................................................. 0.41Ω ● ID .......................................................................................

文件：62.83 Kbytes 页数：5 Pages

POWEREX

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................300V ● rDS (ON) (MAX) .............................................................. 0.41Ω ● ID .......................................................................................

文件：56.86 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.31Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：362.48 Kbytes 页数：2 Pages

ISC

无锡固电