HIGH-SPEED SWITCHING USE

● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.65Ω ● ID ......................................................................................... 14A ● Integrated Fast

文件：52.81 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

MITSUBISHI Nch POWER MOSFET

● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.65Ω ● ID ......................................................................................... 14A ● Integrated Fast

文件：91.01 Kbytes 页数：6 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=14A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.80Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：333.07 Kbytes 页数：2 Pages

ISC

无锡固电

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 500V ● rDS (ON) (MAX) ............................................................. 0.80Ω ● ID ........................................................................................

文件：57.54 Kbytes 页数：5 Pages

POWEREX

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 500V ● rDS (ON) (MAX) ............................................................. 0.80Ω ● ID ........................................................................................

文件：51.68 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 0.36Ω ● ID .......................................................................................

文件：51.39 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 0.36Ω ● ID .......................................................................................

文件：57.19 Kbytes 页数：5 Pages

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=14A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：333.49 Kbytes 页数：2 Pages

ISC

无锡固电

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

文件：122.89 Kbytes 页数：12 Pages

TDK

东电化

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

文件：122.89 Kbytes 页数：12 Pages

TDK

东电化