FIR9N50FG

N-Channel Power MOSFET

FQA9N50

500VN-ChannelMOSFET

500VN-ChannelMOSFET

FQAF9N50

500VN-ChannelMOSFET

Features •7.2A,500V,RDS(on)=0.73Ω@VGS=10V •Lowgatecharge(typical28nC) •LowCrss(typical20pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQAF9N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7.2A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.73mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FQB9N50

500VN-ChannelMOSFET

Features •9.0A,500V,RDS(on)=0.73Ω@VGS=10V •Lowgatecharge(typical28nC) •LowCrss(typical20pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQB9N50

500VN-ChannelMOSFET

FQB9N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.73Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQB9N50C

N-ChannelQFET짰MOSFET500V,9A,800m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FQB9N50C

500VN-ChannelMOSFET

FQB9N50C

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths