丝印：FIR80N085P；Package：TO-220；N-Channel Enhancement Mode Power Mosfet

文件：4.37678 Mbytes 页数：7 Pages

FOSTER

福斯特半导体

功率MOS/中低压功率MOS

First

福斯特

HiPerFET MOSFET ISOPLUS220

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

文件：530.81 Kbytes 页数：2 Pages

IXYS

艾赛斯

HIPERFET-TM MOSFET ISOPLUS220-TM

Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

文件：75.16 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：323.37 Kbytes 页数：2 Pages

ISC

无锡固电