FIR6N65FG资料datasheet下载供应价格FOSTER-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FIR6N65FG	文件：5.7704 Mbytes Page：10 Pages	N-Channel Power MOSFET 文件：5.7704 Mbytes 页数：10 Pages	FOSTER 福斯特半导体	FOSTER
FIR6N65FG(M)	文件：300 bytes Page：1 Pages	功率MOS/高压功率MOS	First 福斯特	First
FIR6N65LG	文件：4.36511 Mbytes Page：10 Pages	N-Channel Power MOSFET 文件：4.36511 Mbytes 页数：10 Pages	FOSTER 福斯特半导体	FOSTER
GB6N65TD	文件：1.95385 Mbytes Page：6 Pages	650V/6A Trench Field Stop IGBT Features： •High ruggedness performance •Very tight parameter distribution •Positive VCE (sat) temperature coefficient •High efficiency for motor control •Excellent current sharing in parallel operation •RoHS compliant Applications： •Home appliances •Motor drives •Fan, Pumps, Vacuum clean 文件：1.95385 Mbytes 页数：6 Pages	LUGUANG 鲁光电子	LUGUANG
GD6N65ST	文件：8.81298 Mbytes Page：7 Pages	650V/6A Trehch and Field Stop IGBT Features  650V 6A,VCE(sat)(typ.) = 1.7 V@6A  Trench and Field Stop IGBT Technology.  High efficiency for motor control .  Very tight parameter distribution.  Positive VCE (sat) temperature coefficient.  High ruggedness performance.  Excellent Current Sharing in Parallel Operation. B 文件：8.81298 Mbytes 页数：7 Pages	LUGUANG 鲁光电子	LUGUANG

更多FIR6N65FG供应商更新时间2025-10-10 11:10:00