FIR5N80FG技术资料参数原装现货FOSTER-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FIR5N80FG	文件：2.13658 Mbytes Page：8 Pages	800V N-Channel MOSFET -T 文件：2.13658 Mbytes 页数：8 Pages	FOSTER 福斯特半导体	FOSTER
FIR5N80FG(T)	文件：300 bytes Page：1 Pages	功率MOS/高压功率MOS	First 福斯特	First
FKPF5N80	文件：158.17 Kbytes Page：7 Pages	Bi-Directional Triode Thyristor Planar Silicon 文件：158.17 Kbytes 页数：7 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB5N80	文件：670.77 Kbytes Page：9 Pages	800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with 文件：670.77 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI5N80	文件：670.77 Kbytes Page：9 Pages	800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with 文件：670.77 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

更多FIR5N80FG供应商更新时间2025-10-10 14:02:00