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FQB5N50

500VN-ChannelMOSFET

Features •4.5A,500V,RDS(on)=1.8Ω@VGS=10V •Lowgatecharge(typical13nC) •LowCrss(typical8.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB5N50C

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB5N50C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB5N50CF

500VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB5N50CFTF

500VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB5N50CFTM

500VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD5N50

500VN-ChannelMOSFET

500VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD5N50

500VN-ChannelMOSFET

DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

TGS

Tiger Electronic Co.,Ltd

FQD5N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD5N50C

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD5N50C

500VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD5N50CTM

TO252-3L,JEDECOPTIONAA,PACKINGCONFIGURATIONFigure1.0

etc2List of Unclassifed Manufacturers

etc2未分类制造商

FQI5N50

500VN-ChannelMOSFET

Features •4.5A,500V,RDS(on)=1.8Ω@VGS=10V •Lowgatecharge(typical13nC) •LowCrss(typical8.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI5N50C

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP5N50

500VNCHANNELMOSFET

500VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP5N50

500V,5AN-ChannelMOSFET

GeneralDescription TheFQP5N50&FQPF5N50havebeenfabricatedusing anadvancedhighvoltageMOSFETprocessthatis designedtodeliverhighlevelsofperformanceand robustnessinpopularAC-DCapplications. ByprovidinglowRDS(on),CissandCrssalongwith guaranteedavalanchecapabilit

ETCList of Unclassifed Manufacturers

未分类制造商

FQP5N50C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQP5N50C

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF5N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF5N50

500V,5AN-ChannelMOSFET

GeneralDescription TheFQP5N50&FQPF5N50havebeenfabricatedusing anadvancedhighvoltageMOSFETprocessthatis designedtodeliverhighlevelsofperformanceand robustnessinpopularAC-DCapplications. ByprovidinglowRDS(on),CissandCrssalongwith guaranteedavalanchecapabilit

ETCList of Unclassifed Manufacturers

未分类制造商

供应商型号品牌批号封装库存备注价格
VB
2019
TO-251
55000
绝对原装正品假一罚十!
询价
First
23+
TO-251
12300
全新原装真实库存含13点增值税票!
询价
First
2020+
TO-251
40190
公司代理品牌,原装现货超低价清仓!
询价
FIRST/福斯特
23+
TO-251
10000
公司只做原装正品
询价
FIRST/福斯特
21+ROHS
TO251
28888
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FIRST
24+25+/26+27+
TO-251-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
VBSEMI
19+
TO-251
29600
绝对原装现货,价格优势!
询价
23+
N/A
85400
正品授权货源可靠
询价
FIRST/福斯特
2022+
TO-220F
50000
原厂代理 终端免费提供样品
询价
FIRST/福斯特
2022+
TO-220F
79999
询价
更多FIR5N50BPG供应商 更新时间2024-5-17 14:25:00