FIR4N80FG数据表ic资料库存现货福斯特First-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FIR4N80FG	文件：5.02461 Mbytes Page：8 Pages	N-Channel Power MOSFET-Y 文件：5.02461 Mbytes 页数：8 Pages	FOSTER 福斯特半导体	FOSTER
FIR4N80FG	文件：300 bytes Page：1 Pages	场效应管 / 高压MOSFERs	First 福斯特	First
FIR4N80LG	文件：4.89695 Mbytes Page：8 Pages	N-Channel Power MOSFET-Y 文件：4.89695 Mbytes 页数：8 Pages	FOSTER 福斯特半导体	FOSTER
FQB4N80	文件：659.85 Kbytes Page：9 Pages	800V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件：659.85 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild
FQB4N80	文件：9.6037 Mbytes Page：9 Pages	N-Channel QFET MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件：9.6037 Mbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild

更多FIR4N80FG供应商更新时间2025-12-1 20:00:00