丝印：FIR140N10R；Package：TO-263；N-Channel Enhancement Mode Power Mosfet

文件：3.6961 Mbytes 页数：7 Pages

FOSTER

福斯特半导体

功率MOS/中低压功率MOS

First

福斯特

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：649.58 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=140A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.01Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：362.86 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Channel MOSFET

文件：679.96 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体