GaAs HEMTs

The FHX35LP is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for high volume telec • Low Noise Figure: 1.2B (Typ.)@f=12GHz\n• High Associated Gain: 10.0dB (Typ.)@f=12GHz\n• Lg ≤ 0.25µm, Wg = 280µm\n• Gold Gate Metallization for High Reliability\n• Cost Effective Ceramic Microstrip (SMT) Package\n• Tape and Reel Packaging Available;

SUMITOMO

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