GaAs FET & HEMT Chips

文件：62.83 Kbytes 页数：4 Pages

EUDYNA

Super Low Noise HEMT

文件：87.21 Kbytes 页数：5 Pages

EUDYNA

High Efficiency

Surge

GaAs HEMTs

The FHX04X, FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Sumitomo Electric's stringent • Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04)\n• High Associated Gain: 10.5dB (Typ.)@f=12GHz\n• Lg ≤ 0.25µm, Wg = 200µm\n• Gold Gate Metallization for High Reliability;

SUMITOMO

住友商事

Super Low Noise HEMT

Fujitsu

富士通

包装：散装 类别：连接器，互连器件 圆形连接器组件 描述：CONN PLUG MALE 4P GOLD SLDR CUP

LEMO

雷莫

包装：散装 类别：连接器，互连器件 圆形连接器组件 描述：CONN PLUG MALE 5P GOLD SLDR CUP

LEMO

雷莫

包装：散装 类别：连接器，互连器件 圆形连接器组件 描述：CONN PLUG MALE 9P GOLD SLDR CUP

LEMO

雷莫