20N40为低压大电流功率MOS场效应管,适用于220V方波输出，800W的逆变器的后级电路，电源逆变器和同步整流电路中。

FeiHong

飞虹

场效应管(MOSFET)

E-CMOS

飞虹高科

400V N-Channel MOSFET

Features • 19.5A, 400V, RDS(on) = 0.22 Ω @ VGS = 10 V • Low gate charge ( typical 60 nC) • Low Crss ( typical 45 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：718.01 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=19.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.22Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：363.21 Kbytes 页数：2 Pages

ISC

无锡固电

SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–C

文件：118.01 Kbytes 页数：5 Pages

ONSEMI

安森美半导体