场效应管(MOSFET)

E-CMOS

飞虹高科

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg

文件：339 Kbytes 页数：12 Pages

Infineon

英飞凌

High Speed IGBT in NPT-technology

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature -

文件：326.01 Kbytes 页数：11 Pages

Infineon

英飞凌

High Speed IGBT in NPT-technology

文件：820.88 Kbytes 页数：11 Pages

Infineon

英飞凌