IGBT，超场截止 -1200V 75A

This Insulated Gate Bipolar Transistor (IGBT) features a robust and\ncost effective Ultra Field Stop Trench construction, and provides superior\nperformance in demanding switching applications, offering both low on\nstate voltage and minimal switching loss. The IGBT is well suited for\nUPS and solar • Extremely Efficient Trench with Ultra Field Stop Technology\n• TJmax = 175°C\n• Soft Fast Reverse Recovery Diode\n• Optimized for High Speed Switching\n• These are Pb−Free Devices;

ONSEMI

安森美半导体

丝印：FGY75T120SQDN；Package：TO-247-3LD；Ultra Field Stop IGBT, 1200 V, 75 A

General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well s

文件：559.08 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Package：TO-247-3 变式；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 75A UFS

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), Non SCR, Power TO247-3L, 1200V, 1.7V, 75A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS and ESS. Features 

文件：287.09 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), Non SCR, Power TO247-3L, 1200V, 1.7V, 75A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS and ESS. Features • M

文件：331.9 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

1200V, 75A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.26636 Mbytes 页数：8 Pages

NCEPOWER

新洁能