首页 >FGH50T65UPD功率三极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FieldStopTrenchIGBT50A,650V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
FieldStopTrenchIGBT50A,650V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HybridIGBT50A,650V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HybridIGBT,50A,650V Usingthenovelfieldstop4thgenerationIGBTtechnologyandthe 1.5thgenerationSiCSchottkyDiodetechnology, AFGHL50T65SQDCofferstheoptimumperformancewithbothlow conductionandswitchinglossesforhighefficiencyoperationsin variousapplications,especiallytotempolebridgeless | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
IGBT-FieldStop,Trench650V,50A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
IGBT-FieldStop,Trench650V,50A Description UsinginnovativefieldstoptrenchIGBTtechnology, ONSemiconductor’snewseriesoffield−stoptrenchIGBTsoffer optimumperformanceforsolarinverter,UPS,welder,anddigital powergeneratorwherelowconductionandswitchinglossesare essential. Features •MaximumJunctio | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
650V,50AFieldStopTrenchIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FieldStopTrenchIGBT650V,50A Fieldstop4thgenerationmidspeedIGBTtechnologyandfull currentratedcopakDiodetechnology. Features •MaximumJunctionTemperature:TJ=175°C •PositiveTemperatureCo−efficientforEasyParallelOperating •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=1.45V(Typ.) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
FieldStopTrenchIGBT650V,50A Fieldstop4thgenerationmidspeedIGBTtechnologycopacked withfullratedcurrentdiode. Features •MaximumJunctionTemperature:TJ=175°C •PositiveTemperatureCo−efficientforEasyParallelOperating •HighCurrentCapability •LowSaturationVoltage:VCE(Sat)=1.45V(Typ.)@IC= | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
IGBT-FieldStop,Trench650V,50A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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