IGBT，650 V，40A，场截止沟槽

安森美半导体新型场截止第 4 代 IGBT 采用创新型的场截止 IGBT 技术，可以提供优越的导通和开关性能，并且易于并联运行。 该设备非常适合谐振或软开关应用，例如感应加热、微波炉等。 •最大结温： TJ = 175°C\n•正温度系数，易于并联运行\n•高电流能力\n•低饱和电压： VCE(sat) = 1.33 V（典型值） @ IC = 40 A\n•ILM\n部件100%检测\n•高输入阻抗\n•紧密的参数分布\n•符合 RoHS 标准\n• Low Conduction Loss Design for Soft Switching Application;

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安森美半导体

Field Stop Trench IGBT

文件：1.22822 Mbytes 页数：11 Pages

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安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：FS4TIGBT TO247 40A 650V

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安森美半导体

Field Stop Trench IGBT 40 A, 650 V

Field stop 4th generation Low VCE(Sat) IGBT technology and Full current rated copak Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ

文件：211.97 Kbytes 页数：9 Pages

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安森美半导体

Field Stop Trench IGBT 650 V, 40 A

Field stop 4th generation mid speed IGBT technology and full current rated copak Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.45 V (Typ.)

文件：338.01 Kbytes 页数：9 Pages

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安森美半导体

Field Stop Trench IGBT 650 V, 40 A

Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC =

文件：257.72 Kbytes 页数：9 Pages

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安森美半导体