600 V, 40 A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ing losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE

文件：308.19 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

600V，40A，场截止 IGBT

飞兆半导体的场截止 IGBT 系列采用新型场截止 IGBT 技术，为光伏逆变器、UPS、焊机和 PFC 等低导通和开关损耗至关重要的应用提供了最佳性能。 •高电流能力\n•低饱和电压：VCE(sat) =1.8V @ IC = 40A\n•高输入阻抗\n•快速开关\n•符合 RoHS 标准;

ONSEMI

安森美半导体

IGBT，600V，40A，场截止

飞兆半导体的场截止 IGBT 系列采用新型场截止 IGBT 技术，为光伏逆变器、UPS、焊机、微波炉、通讯、ESS 和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能。 •高电流能力\n•低饱和电压：VCE(sat) =1.8V @ IC = 40A\n•高输入阻抗\n•快速开关：EOFF =12uJ/A\n•符合 RoHS 标准;

ONSEMI

安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 600V 80A TO247-3

ONSEMI

安森美半导体

Package：TO-247-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 600V 80A TO247-3

ONSEMI

安森美半导体