VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode

Description The KGF65A4H, MGF65A4H, and FGF65A4H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the efficiency of your circuit. Features ● Lo

文件：730.49 Kbytes 页数：15 Pages

SANKEN

三垦

Trench Field Stop IGBTs with Fast Recovery Diode

文件：769.1 Kbytes 页数：15 Pages

SANKEN

三垦

Trench Field Stop IGBTs with Fast Recovery Diode

文件：769.1 Kbytes 页数：15 Pages

SANKEN

三垦

IGBT(内置FRD)

FGF65A4H是650V Field Stop型Trench型IGBT。独特的垂直沟道构造减小了寄生容量。高速开关、可以实现开关损耗的降低。IGBT的低损耗有助于系统的高效率。 ・低饱和电压・高速开关・FRD内置・RoHS对应;

Sanken

三垦