IGBT，650V，40A，场截止沟槽

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications •Maximum junction temperature : TJ = 175°C\n•Positive temperaure co-efficient for easy parallel operating\n•High current capability\n• Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A\n•High input impedance\n• 100% of the Parts tested for ILM\n• Fast switching\n•Tightened parameter distr;

ONSEMI

安森美半导体

丝印：FGAF40S65AQ；Package：TO-3PF；Field Stop Trench IGBT 650 V, 40 A

文件：491.99 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Package：TO-3P-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：650V 40A FS4 SA IGBT

ONSEMI

安森美半导体

Field Stop Trench IGBT 40 A, 650 V

文件：311.24 Kbytes 页数：10 Pages

ONSEMI

安森美半导体