IGBT，650V，30A，场截止

飞兆半导体的场截止第二代 IGBT 新系列采用新型场截止 IGBT 技术，为太阳能逆变器、UPS、焊机、感应加热、通讯、ESS 和 PFC 等低传导和开关损耗至关重要的应用提供最佳性能。 •最大结温：TJ =175oC\n•正温度系数，易于并联运行\n•高电流能力\n•低饱和电压：VCE(sat) =1.98 V（典型值）@ IC = 30 A\n•快速开关\n•紧密的参数分布\n•符合 RoHS 标准;

ONSEMI

安森美半导体

650 V, 30 A Field Stop IGBT

文件：337.82 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Package：TO-3P-3，SC-65-3；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 650V 60A TO3PN

ONSEMI

安森美半导体

Trench and Field Stop IGBT 650V 30A

Features • High Speed Smooth Switching Device for Hard and Soft Switching • Vce(sat) with Positive Temperature Coefficient • High Ruggedness, Good Thermal Stability • Very Tight Parameter Distribution • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead

文件：1.18549 Mbytes 页数：6 Pages

MCC

Trench and Field Stop IGBT 650V 30A

Features • High Speed Smooth Switching Device for Hard and Soft Switching • Vce(sat) with Positive Temperature Coefficient • High Ruggedness, Good Thermal Stability • Very Tight Parameter Distribution • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead

文件：1.18549 Mbytes 页数：6 Pages

MCC

Trench and Field Stop IGBT 650V 30A

Features • High Speed Smooth Switching Device for Hard and Soft Switching • Vce(sat) with Positive Temperature Coefficient • High Ruggedness, Good Thermal Stability • Very Tight Parameter Distribution • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead

文件：1.01159 Mbytes 页数：7 Pages

MCC