FFSP10120A

SiC 二极管，1200V，10A，TO-220-2; • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery\n;

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

FFSP10120A

丝印：FFSP10120A；Package：TO-220-2LD；Silicon Carbide Schottky Diode 1200 V, 10 A

FFSP10120A

Package：TO-220-2；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 1.2KV 10A TO220-2

FP10120

SILICONSURGESUPPRESSORDIODES

[LEDEX]

FP10120A

SILICONSURGESUPPRESSORDIODES

[LEDEX]

FST10120

10AMPSCHOTTKYBARRIERRECTIFIER

10AmpSchottkyBarrierRectifiers ●Schottkybarrierrectifier ●Guardringforreverseprotection ●Lowpowerloss,highefficiency ●Highsurgecapacity ●VRRM120to150Volts