SiC 二极管，1200V，10A，TO-220-2

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

ONSEMI

安森美半导体

丝印：FFSP10120A；Package：TO-220-2LD；Silicon Carbide Schottky Diode 1200 V, 10 A

文件：301.35 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-220-2；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 1.2KV 10A TO220-2

ONSEMI

安森美半导体

SILICON SURGE SUPPRESSOR DIODES

[LEDEX]

文件：390.72 Kbytes 页数：10 Pages

ETC1List of Unclassifed Manufacturers

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SILICON SURGE SUPPRESSOR DIODES

[LEDEX]

文件：390.72 Kbytes 页数：10 Pages

ETC1List of Unclassifed Manufacturers

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10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring for reverse protection ● Low power loss, high efficiency ● High surge capacity ● VRRM 120 to 150 Volts

文件：150.63 Kbytes 页数：2 Pages

Microsemi

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