Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, TO-220-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the • High UIS, Surge Current, and Avalanche\n• 33 mJ\n• High Junction Temperature\n• Tj = 175C\n• Low Vf\n• 1.7 V\n• No Qrr\n• ;

ONSEMI

安森美半导体

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE TO220 650V

ONSEMI

安森美半导体

TREK P0865

APPLICATIONS  Charge accumulation monitoring of the LCD production processes  Monitoring surface potentials in the electrostatic painting process  Research and development in the electrophotographic process  Measuring electrostatic potentials on polymers, rubber, fabrics, and paper

文件：136.17 Kbytes 页数：4 Pages

ADVANCEDENERGY

先进能源工业

N-Channel High Voltage Mode Field Effect Transistor

文件：216.4 Kbytes 页数：4 Pages

NIKOSEM

尼克森

N-Channel High Voltage Mode Field Effect Transistor

文件：204.83 Kbytes 页数：4 Pages

NIKOSEM

尼克森