Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, TO-220-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the • High UIS, Surge Current, and Avalanche\n• 33 mJ\n• High Junction Temperature\n• Tj = 175C\n• Low Vf\n• 1.7 V\n• No Qrr\n• ;

ONSEMI

安森美半导体

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE TO220 650V

ONSEMI

安森美半导体

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：331 Kbytes 页数：5 Pages

PANJIT

強茂

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Switching Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application • PFC, UPS, PV

文件：332.75 Kbytes 页数：5 Pages

PANJIT

強茂

Radial Leaded Inductors

文件：150.39 Kbytes 页数：7 Pages

ECM