Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, Power88

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the • Max Junction Temperature\n• Tj = 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

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丝印：FFSM1065B；Package：PQFN；Silicon Carbide Schottky Diode

文件：215.79 Kbytes 页数：6 Pages

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安森美半导体

Package：4-PowerTSFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SILICON CARBIDE DIODE 650V 10A P

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安森美半导体

Silicon Carbide Schottky Diode 650 V, 10 A

文件：301.34 Kbytes 页数：6 Pages

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安森美半导体

Silicon Carbide Schottky Diode 650 V, 10 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：278.59 Kbytes 页数：6 Pages

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安森美半导体

Compact Intelligent Power Module (IPM) Motor Control Development Kit (MDK) 1 kW

文件：2.79432 Mbytes 页数：28 Pages

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安森美半导体