碳化硅（SiC）肖特基二极管 – EliteSiC 50A 6500V D2 TO-247-2L封装

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as • Max Junction Temperature 175C\n• Avalanche Rated 225 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 Qualified and PPAP Capable;

ONSEMI

安森美半导体

丝印：FFSH5065B；Package：TO-247-2LD；Silicon Carbide Schottky Diode

文件：310.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-247-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE 650V

ONSEMI

安森美半导体