丝印：FFSH4065BDN；Package：TO-247-3LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 650 V, D2, TO-247-3L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

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安森美半导体

丝印：FFSH4065BDN；Package：TO-247-3LD；Silicon Carbide Schottky Diode

文件：276.92 Kbytes 页数：6 Pages

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安森美半导体

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 40A, 650V, D2, TO-247-3L

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generat • Max Junction Temperature 175C\n• Avalanche Rated 94 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery\n• Low Vf @ TJ:175 °C;

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汽车碳化硅 (SiC) 肖特基二极管，650 V

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as • Max Junction Temperature 175C\n• Avalanche Rated 94 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 Qualified;

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Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE 650V

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安森美半导体