SiC，双裸片，1200 V，40 A

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as • Max Junction Temperature 175 °C\n• Avalanche Rated 100 mJ\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 qualified and PPAP Capable;

ONSEMI

安森美半导体

丝印：FFSH40120ADN；Package：TO-247-3LD；Silicon Carbide Schottky Diode

文件：341.3 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Package：TO-247-3；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：1200V 40A AUTO SIC SBD

ONSEMI

安森美半导体