FFSH3065B

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D2, TO-247-2L; • High UIS, Surge Current, and Avalanche\n• 144mJ\n• High Junction Temperature\n• Tj = 175C\n• Low Vf\n• 1.38V\n• No Qrr\n• \n;

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

FFSH3065B

丝印：FFSH3065B；Package：TO-247-2LD；Silicon Carbide Schottky Diode

FFSH3065B

Package：TO-247-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE TO247 650V

FFSH3065B_F085

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30A, 650V, D2, TO-247-2L; • Max Junction Temperature 175C\n• Avalanche Rated 144 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 Qualified\n;

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as the next\ngeneration of power semiconductor. System benefits include\nhighest efficiency, faster operating frequency, increased power\ndensity, reduced EMI, and reduced system size & cost

FFSH3065B-F085

肖特基二极管与整流器 650V 30A SIC SBD;

FFSH3065B-F085

丝印：FFSH3065B；Package：TO-247-2LD；Silicon Carbide Schottky Diode, 650 V, 30 A

FFSH3065B-F085

Package：TO-247-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 30A SIC SBD GEN1.5