SiC Diode, 650V, 20A, TO-247-3, Common Cathode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-247-3L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • High Surge Current Capacity\n• Avalanche Rated 64 mJ\n• Max Junction Temperature 175 °C\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

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丝印：FFSH2065ADN；Package：TO-247-3LD；Silicon Carbide Schottky Diode

文件：397.74 Kbytes 页数：6 Pages

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安森美半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 20A SIC SBD

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安森美半导体