SiC 二极管 - 650V，16A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

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安森美半导体

丝印：FFSH1665A；Package：TO247-2L；Silicon Carbide Schottky Diode

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ONSEMI

安森美半导体

Package：TO-247-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 16A SIC SBD

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安森美半导体

SiC Diode, 650V, 16A, TO-247-3, Common Cathode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

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安森美半导体

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 16 A, 650 V, D1, TO-247-3L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature 175 °C\n• Positive Temperature Coefficient\n• Pb−Free, Halogen Free/BFR Free and RoHS Compliant;

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安森美半导体

Package：TO-247-3；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 16A SIC SBD

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安森美半导体