Silicon Carbide (SiC) Schottky Diode - EliteSiC, 12A, 650V, D2, TO-247-3L

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as • Max Junction Temperature 175C\n• PPP Capable\n• Avalanche Rated 24.5 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 Qualified;

ONSEMI

安森美半导体

丝印：FFSH1265BDN；Package：TO-247-3LD；Silicon Carbide Schottky Diode

文件：421.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 12A SIC SBD GEN1.5

ONSEMI

安森美半导体