丝印：FFSH10120A；Package：TO-247-2LD；Silicon Carbide Schottky Diode 1200 V, 10 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

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安森美半导体

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, TO-247-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature\n• Tj = 175 °C\n• Avalanche Rated\n• 100mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery;

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Package：TO-247-2；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE GEN1.0 TO247-2L LL

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安森美半导体