丝印：FFSD2065B；Package：DPAK3；Silicon Carbide Schottky Diode 650 V, 20 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：416.65 Kbytes 页数：6 Pages

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安森美半导体

丝印：FFSD2065B；Package：DPAK3；Silicon Carbide Schottky Diode 650 V, 20 A

文件：479.05 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide Schottky Diode 650 V, 20 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：416.65 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the • High Junction Temperature\n• Tj = 175C\n• High UIS, Surge Current, and Avalanche\n• 94mJ @ 25°C\n• Low Vf\n• No Qrr;

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安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SILICON CARBIDE SCHOTTKY DIODE 6

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安森美半导体